1 h igh diode semiconductor do-35 applications do-35 glass-encapsulate diodes features 1n4148 v r 75v i fav 150ma ?? extreme fast switches small signal fast switching diodes item symbol unit conditions max repetitive peak reverse voltage v rrm v 100 reverse voltage v r v 75 peak forward surge current i fsm a t p =1 s 2 repetitive peak forward current i frm ma 500 forward continuous current i f ma 300 average forward current i fav ma v r =0 150 power dissipation p tot mw l=4mm,t l =45 440 l=4mm,t l 25 500 thermal resistance r thja /w junction to ambient air, l=4mm,t l =constant 350 maximum junction temperature t j 175 storage temperature range t stg -65 to +175
electrical characteristics (t a =25 unless otherwise noted) h igh diode semiconductor item symbol unit conditions max forward voltage v f mv i f =200ma 1000 reverse current i r na v r =20v 25 i r a v r =20v,t j =150 50 i r a v r =75v 5 breakdown voltage v (br) v i r =100 a , t p /t=0.01, t p =0.3ms 100(min) diode capacitance c d pf v r =0, f =1mh z , v hf =50mv 4 reverse recovery time t rr ns i f = i r =10ma , i r =1ma 8 t rr ns i f = 10ma , v r =6v , i r =0.1i r , r l =100 ? 4
typical characteristics 4 h igh diode semiconductor -30 120 0 tj vf(v) fig1: forward voltage vs. junction temperature 1.2 0.6 0 30 60 90 0.2 0.4 0.8 1.0 if = 100ma 10ma 1ma 0.1ma 1 100 1 vr(v) ir(na) fig3:reverse current vs. reverse voltage 1000 10 100 10 tj=25 scattering limit 0 2.0 0.1 vf(v) if(ma) fig2: forward current vs. forward voltage 1000 10 0.4 0.8 1.2 1.6 1.0 100 tj=25 1n4148 scattering limit
5 jshd jshd h igh diode semiconductor do-35 unit: in inches (millimeters) 1.02(26.0) min .165(4.20) max .022(0.55) max .079(2.00) max 1.02(26.0) min
h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers 6
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